摘要
建立了多光束干涉光刻干涉场内光强分布的数学模型,仿真计算了双光束、三光束、四光束干涉曝光情况下,入射光束存在角度偏差以及各入射光强不同时的干涉图样,并与理想状态的模拟结果进行对比.结果表明:光束入射角度偏差主要影响干涉图样的形状和周期;入射光的光强不同是降低图形对比度的主要因素.利用402nm波长激光光源进行多光束干涉光刻实验.设定激光器输出功率32mW,每两束光夹角为16°,通过控制曝光、显影工艺,双光束干涉光刻产生周期为1.4μm的光栅、点阵和孔阵结构,三光束干涉光刻产生周期为1.7μm的六边形图形阵列.该模型可为利用干涉光刻技术制备微细周期结构,提高光刻图形质量,提供一定的理论参考.
Based on the mathematical model of light intensity distribution in multi-beam interference field,the patterns have been calculated and stimulated respectively for two beams,three beams and four beams interference exposure,in the case of having incidence angle errors and unequal intensity of each beam.The stimulated results have been analyzed and compared with that in ideal situation.The study results show that angel deviation of incident beam mainly affects the shape and period of interference pattern,and inequality of light intensity of each incident beam is the main factor that leads to decrease of pattern contrast.The multi-beam interference lithography experiments have been done by using a laser source with the wavelength of 402 nm.Under the conditions of 32 mW laser output power and 16°angle between two incident beams,by controlling exposure dose and development process,the gratings,dots and holes array with the period of about 1.4μm have been generated by two-beam interference lithography,and the hexagon array with the period of about 1.7μm have been got by three-beam interference lithography.The results provide some theoretical reference for fabricating micro-nano periodic structures and improving the quality of pattern by multi-beam interference lithography technology.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2015年第10期45-51,共7页
Acta Photonica Sinica
基金
陕西省教育厅重点实验室科研计划(No.13JS038)
陕西省科技厅重点实验室项目(No.2013SZS14-P01)
广东省科技厅高新区发展引导专项(No.2011B010700101)
西安工业大学校长科研基金(No.XAGDXJJ1303)资助~~
关键词
多光束干涉
干涉光刻
周期结构
角度偏差
光强偏差
干涉光强分布
Multi-beam interference
Interference lithography
Periodic structures
Angle deviation
Light intensity deviation
Interference intensity distribution
