摘要
采用液相外延（LPE）生长的中波Hg Cd Te薄膜,基于B离子注入n-on-p平面结技术,制备了LBIC测试结构和I-V测试芯片并进行了相应的测试和分析。LBIC测试结果表明,Hg Cd Te pn结实际结区尺寸扩展4～5μm,这主要与光刻、B离子注入以及注入后低温退火等器件工艺有关。二极管器件C-V和I-V特性研究表明,所制备的Hg Cd Te pn结不是突变结也不是线性缓变结。中波Hg Cd Te二极管器件最高动态阻抗大于30 GΩ,器件优值R0A高达1.21×10^5Ωcm^2,表现出较好的器件性能。
Based on LPE MW HgCdTe growth technique and B ion implant n-on-p planar junction technology, the LBIC test structure and I-V test chip are prepared and measured. LBIC test results show that the actual size of HgCdTe pn junction extends 4-5 μm, which is mainly related to the device process of the lithography, B ion implant and low temperature annealing followed implantation. Studies on the C-V and I-V characteristics of diode point out that HgCdTe pn junction is neither abrupt junction nor linearly graded junction. The maximum dynamic resistance of photodiode exceeds 30 GΩ, and the R0A value of device reaches 1.21×10^5Ωcm^2, which shows good device performance.
出处
《红外技术》
CSCD
北大核心
2015年第11期911-915,共5页
Infrared Technology
基金
国防973项目
编号:613230
云南省创新团队计划
编号:2014HC020
