摘要
针对碳化硅(SiC)材料在微电子制造和封装过程中广泛的应用前景,对碳化硅与碳化硅进行了直接键合实验。通过拉伸实验进行了样品键合强度的测试以及借助扫描电子显微镜(SEM)和能谱仪(EDS)等对碳化硅键合样品界面的微观结构进行了分析。结果表明:亲水性表面处理和高温退火是形成界面过渡层的主要因素,并且界面过渡层的形成增强了碳化硅牢固的键合效果。
For the broad application prospect of silicon carbide（SiC）in microelectronics manufacturing and packaging process,the direct bonding experiment between SiC and SiC was carried out.The bonding strength of the sample was tested by the tensile experiment,and the microstructure of the SiC bonding sample interface was analyzed by the scanning electron microscopy（SEM）and energy dispersive spectrometer（EDS）,respectively.The results indicate that a transition layer is formed at the bonding interface of SiC and SiC.The hydrophilic surface treatment and annealing at the high temperature are the main reasons of the formation of the transition layer,and its formation strengthens the strong bonding effect of SiC.
出处
《微纳电子技术》
CAS
北大核心
2015年第11期729-732,746,共5页
Micronanoelectronic Technology
基金
国家杰出青年科学基金资助项目(51425505)
国家自然科学基金资助项目(51405454)
关键词
碳化硅键合
键合强度
微观结构
亲水性表面处理
退火
过渡层
SiC bonding
bonding strength
microstructure
hydrophilic surface treatment
an-nealing
transition layer
