期刊文献+

MEMS制造中精确测量薄膜厚度的方法研究与比较 被引量:3

Study and comparision of accurate measurement methods for film thickness in MEMS fabrication
下载PDF
导出
摘要 精确测量各种功能薄膜的厚度在微机电系统(MEMS)制造加工过程中有非常重要的意义。利用接触式表面轮廓仪、光谱椭偏仪、电感测微仪、扫描电镜、原子力显微镜和工具显微镜分别测量了10 nm^100μm各种薄膜的厚度。比较了不同测量仪器的测量范围、分辨率和对样品的适用性,分析了薄膜厚度测量过程中误差产生的机理。实验结果表明:当存在膜层台阶时,10 nm^100μm的膜厚测量均可采用接触式表面轮廓仪,对于硬度较高的膜层可采用电感测微仪,对于厚度小于0.5μm的膜层可采用原子力显微镜;对于可观察样品侧面、厚度大于0.7μm的膜层可采用扫描电镜,工具显微镜适用于μm级膜层,对于厚度大于20μm的膜层不宜采用光谱椭偏仪。 It is very important to accurately measure thicknesses of various functional films during micro-electromechanical systems( MEMS) manufacturing process. Various sample films with thickness of 10 nm ~ 100 μm are measured by contact surface profilometer,spectroscopic ellipsometer,inductance micrometer,scanning electron microscope( SEM),atomic force microscopy( AFM) and toolroom microscope. The measurement range,resolution and applicability of different measurement equipments are compared,error generation mechanism during thickness measurement is analyzed. Experimental results show that when there is a mesa layer on the substrate,contact surface profilometer can be used for thickness measuring at range of 10 nm ~ 100 μm; inductance micrometer is suitable for harder layer; AFM can be used for measuring thickness less than 0. 5 μm; SEM is suitable for sample with homogeneous profile and with thickness more than 0. 7 μm; toolroom microscope can be used for micro-scale layer; spectroscopic ellipsometer is not suitable for measuring the thickness more than 20 μm.
作者 陈莉 尹鹏和
出处 《传感器与微系统》 CSCD 2015年第10期15-17,21,共4页 Transducer and Microsystem Technologies
关键词 薄膜厚度 接触式表面轮廓仪 光谱椭偏仪 film thickness contact surface profilometer spectroscopic ellipsometer
  • 相关文献

参考文献12

  • 1Bogue R.Recent developments in MEMS sensors:A review of applications,markets and technologies[J].Sensor Review,2013,33(4):300-304. 被引量:1
  • 2乔大勇,史龙飞,曹兰玉,练彬.MEMS扫描镜温度可靠性测试[J].传感器与微系统,2014,33(12):146-148. 被引量:3
  • 3徐永青,杨拥军.硅MEMS器件加工技术及展望[J].微纳电子技术,2010,47(7):425-431. 被引量:23
  • 4朱京,温廷敦,许丽萍,陈磊.基于介观压光效应的MEMS陀螺研究[J].传感器与微系统,2015,34(3):15-17. 被引量:3
  • 5Karouta F,Vora K,Tian Jie,et al.Structural,compositional and optical properties of PECVD silicon nitride layers[J].Journal of Physics D—Applied Physics,2012,45(44):1-10. 被引量:1
  • 6Lorenz H,Despont M,Vettiger P,et al.Fabrication of photoplastic high-aspect ratio microparts and micromolds using SU—8 UV resist[J].Microsystem Technologies,1998,4(3):143-146. 被引量:1
  • 7Koutsoureli M,Michalas L,Gantis A,et al.A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches[J].Microelectronics Reliability,2014,54:2159-2163. 被引量:1
  • 8Zhang Guangping,Volkert C A,Schwaiger R,et al.Length-scalecontrolled fatigue mechanisms in thin copper films[J].Acta Materialia,2006,54(11):3127-3139. 被引量:1
  • 9Schwaiger R,Kraft O.Size effects in the fatigue behavior of thin Ag films[J].Acta Materialia,2003,51(1):195-206. 被引量:1
  • 10Watkins L R.A phase-stepped spectroscopic ellipsometer[J].Optics and Lasers in Engineering,2015,67:182-185. 被引量:1

二级参考文献24

  • 1张文明,孟光.MEMS可靠性与失效分析[J].机械强度,2005,27(6):855-859. 被引量:22
  • 2HSU T R. MEMS and microsystems-design and manufacture [M]. Boston:Mcgraw-Hill, 2002. 被引量:1
  • 3BARRON C C, COMTOIS J H, MICHALICEK M A. Electrothermal actuators fabricated in four-level planarized surface mieromachined polycrystalline silicon [J]. Sensors and Actuators: A, 1998, 70 (1/2): 23-31. 被引量:1
  • 4BALTES H, BRAND O. CMOS-based microsensors and packaging [J]. Sens Actuator: A, 200I, 92 (1/2/3): 1-9. 被引量:1
  • 5PREMACHANDRAN C S, MOHANRAJ R N S, CHONG SER CHOONG IYER M K. A vertical wafer level packaging using through hole filled via by liftoff polymer method for MEMS and 3D stack application [C] // Proceeding of 55^th ECTC. Las Vegas, USA, 2005: 1094- 1098. 被引量:1
  • 6WAGNER M. Method for creating low cost 3D MEMS chemical sensors by using through wafer via and wafer bonding [C] // Proceeding of 57^th ECTC. Reno, NV, USA, 2007: 1119- 1126. 被引量:1
  • 7GOOCH R. Wafer level vacuum packaging for MEMS [J]. Journal of Vacuum Science and Technology: A, 1999, 17 (4) : 2295 - 2299. 被引量:1
  • 8GILLEO K.MEMS/MOEMS封装技术[M].北京;化学工业出版社,2008. 被引量:1
  • 9陈勤,范树新,张维波.MEMS传感器的标准化现状与发展对策[J].传感器与微系统,2007,26(8):6-8. 被引量:9
  • 10GB/T1031-1995.表面粗糙度参数及其数值[S].[S].,.. 被引量:8

共引文献26

同被引文献26

引证文献3

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部