摘要
随着场效应晶体管(MOSFET)器件尺寸的进一步缩小和器件新结构的引入,学术界和工业界对器件中热载流子注入(hot carrier injections,HCI)所引起的可靠性问题日益关注.本文研究了超短沟道长度(L=30—150 nm)绝缘层上硅(silicon on insulator,SOI)场效应晶体管在HCI应力下的电学性能退化机理.研究结果表明,在超短沟道情况下,HCI应力导致的退化随着沟道长度变小而减轻.通过研究不同栅长器件的恢复特性可以看出,该现象是由于随着沟道长度的减小,HCI应力下偏压温度不稳定性效应所占比例变大而导致的.此外,本文关于SOI器件中HCI应力导致的退化和器件栅长关系的结果与最近报道的鳍式场效晶体管(Fin FET)中的结果相反.因此,在超短沟道情况下,SOI平面MOSFET器件有可能具有比Fin FET器件更好的HCI可靠性.
With the continued device scaling and the introduction of new device structures, MOSFET reliability phenomena arising from the hot carrier injection （HCI） stress have received extensive attention from both the academia and the industry community. In this work, the degradations of ultra-scaled silicon on insulator （SOI） MOSFETs under the HCI stress are investigated on devices of different gate lengths （L = 30-150 nm）. Our experimental data demonstrate that the time evolutions of the threshold voltage change （Vth） under the HCI stress for different gate length devices are the same, and the magnitude of Vth reduces for the shorter devices. The degradation of the device under the HCI stress should be due to both the channel hot carrier （CHC） effect and the bias temperature instability （BTI） effect. The distribution and magnitude of the electric field along the MOSFET＇s channel are analyzed. It is confirmed that besides the well-known CHC effect in the depletion region close to the drain side, a strong BTI effect co-exists in the channel close to the source side. This degradation mechanism is different from the conventional HCI stress. With the gate length decreasing, the contribution of the aforementioned BTI effect becomes larger, and it dominates in the degradation. One feature of the BTI effects is that the corresponding degradation is small when the gate length is short. This is consistent with our experimental result that the change of Yth is small for the device of short gate length under the accelerated HCI stress. The time evolution of Vth can be described by the equation Yth ^- A. tn, where A is a constant, t is the stress time, and n is the power law exponent obtained by the curve fitting. In this study, the power law exponent n of pMOSFET is larger than that of nMOSFET. This experimental fact can lead to the point that the BTI effect exists during the HCI stress because the BTI effect in ultra-scaled pMOSFETs is more significant than that in nMOSFETs. The stress-recover experi
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2015年第16期384-390,共7页
Acta Physica Sinica
基金
国家重点基础研究发展规划(批准号:2011CBA00607)
国家自然科学基金(批准号:61376097)
浙江省自然科学基金(批准号:LR14F040001)
功能信息材料国家重点实验室开放课题(批准号:SKL201304)资助的课题~~
关键词
绝缘层上硅
场效应晶体管
热载流子注入
沟道长度
silicon on insulator, metal-oxide semiconductor field effect transistor, hot carrier injection,gate length
