摘要
采用一种新颖的方法——多晶硅加热法评价了金属连线的电迁移(EM)寿命.用该方法得到的结果与传统封装测试法得到的结果进行了对比,两者有相当好的一致性.同时,测试时间不到封装测试的1‰.说明多晶硅加热法是一种非常有效的EM评价方法.由于该方法是晶片级测试,而且测试时间非常短,所以采用这种方法可以实现对金属互连线质量的在线实时监控.
A novel metal line electromigration （EM） investigation method is used. Experiment results with the new method is compared with those of the common package method. The results with the two methods are very consistent. But, with the poly silicon heating method,the measurement time is less than 1‰ of that with the common package method. This indicates that the poly silicon heating method is a very effective method for metal line EM investigation. Because the poly silicon heating method is completed at the wafer level, the quality of metal line can be monitored on-line with this method.
关键词
金属互连线
电迁移
多晶硅
metal interconnection
electromigration
poly silicon
