摘要
分析了电离总剂量加固的基本理论,提出了先进行P阱注入,高温退火形成要求的P阱结深,再进行高质量Si O2-Si3N4双层栅介质的生长工艺,来提高VDMOS器件的抗辐射能力,加固后器件的总剂量由原来的5k Rad(Si)增加到100k Rad(Si)。试验结果表明这种加固技术可以提高器件的电离总剂量强度。
This paper analyses the basic theory of total ionizing dose reinforcement, we put forward high temperature annealing to form P well, after the P well injection,secondiy grow high quality SiO2-Si3N4 bilayer gate dielectrics, to improve the antiradiation ability of VDMOS devices, the total dose of reinforced devices from 5kRad （Si） to 100kRad （Si）. The results of experiment show that the strengthening technology can improve the total ionizing dose intensity device.
出处
《黑龙江科技信息》
2015年第19期14-15,共2页
Heilongjiang Science and Technology Information
关键词
电离总剂量
双层栅介质
研究
Total dose ionizing
Double gate dielectric
