摘要
在空间和核辐射环境下,电离总剂量辐射(TID)效应严重影响采用商用CMOS工艺的SRAM的可靠性和寿命。针对SRAM,设计了四种TID加固的存储单元,分析对比了四个加固单元对TID,单粒子闩锁、单粒子翻转三种SRAM中常见辐射效应的抵御水平以及加固单元的面积和速度。加固SRAM单元的抗TID水平得到极大提高,同时,抗单粒子效应水平、面积、速度也达到一定的要求。这些单元可用于实现基于商用CMOS工艺并具有高抗辐射性能的SRAM。
In space radiation and nuclear radiation environments,total ionizing dose（TID） effects have serious impact on reliability and lifetime of SRAM＇s fabricated with commercial CMOS process.Four types of TID tolerable memory cells were designed for SRAM,and their radiation tolerance to single event latchup,single event upset and TID effects was analyzed,as well as their speed and area.It has been shown that these cells,which had excellent TID tolerance and reasonable SEE tolerance,could be used for high-level radiation tolerant SRAM＇s using commercial CMOS process.
出处
《微电子学》
CAS
CSCD
北大核心
2013年第1期76-80,共5页
Microelectronics
基金
国家重大科学仪器专项(2011YQ)
西北工业大学研究生创业种子基金资助项目(Z2012188)
