期刊文献+

星敏感器用典型CCD探测器电离总剂量效应研究 被引量:1

Study of Total Ionizing Dose Effects on Typical CCD for Star Sensor
下载PDF
导出
摘要 用自建的工程单机对星敏感器用核心器件CCD的电离总剂量效应进行了研究,给出了不同辐照剂量下辐照前后图像灰度、标准差等反映CCD拍摄图像质量的参数变化。研究表明:CCD对电离总剂量效应较敏感,辐照会引起输出图像灰度和标准差变大,导致图像质量下降、信噪比降低,最终影响探测器的成像效果。 The total ionizing dose effects on typical CCD for star sensor was studied by the engineering device set up in this paper. The parameters showing the CCD imaging quality which were image gray value before and after irradiation and the standard deviation under various doses were given out. The study showed that CCD was sensitive to the total dose. The irradiation could cause the image gray value and standard deviation becoming bigger which would cause the image quality degraded, signal noise ratio decreased and affect the image of the sensor at last.
出处 《上海航天》 2013年第5期65-67,72,共4页 Aerospace Shanghai
关键词 星敏感器 CCD 电离总剂量效应 Star sensor CCD Total ionizing dose effect
  • 相关文献

参考文献12

  • 1PICKEL J C, KALMA A H, HOPKINSON R G, et al. Radiation effects on photonic imagers: a historical perspective[J]. IEEE Transactions on Nuclear Sci- ence, 2003, 50(3): 671-688. 被引量:1
  • 2WUNSTORF R. Radiation hardness o{ silicon detec- tors: current status[J]. IEEE Transactions on Nucle- ar Science, 1997, 44(3) : 806-814. 被引量:1
  • 3张立国,李豫东,刘则洵,李宪圣,万志,任建岳.TDI-CCD总剂量辐射效应及测试[J].光学精密工程,2009,17(12):2924-2930. 被引量:16
  • 4陈盘训著..半导体器件和集成电路的辐射效应[M].北京:国防工业出版社,2005:400.
  • 5王祖军,唐本奇,张勇,等.辐射损伤诱发CCD敏感参数退化分析[J].抗核加固,2008,25(1):51-58. 被引量:1
  • 6曹建中等著..半导体材料的辐射效应[M].北京:科学出版社,1993:318.
  • 7OLDHAM T R, MCLEAN F B. Totel ionizing close effects in MOS oxides and devices[J]. IEEE Trans Nucl Sci, 2003, 50(3): 483-499. 被引量:1
  • 8SHANEYFELT M R, SCHWANK J R, FLEET- WOOD D M, et al. Effects of irradiation temperature on MOS radiation response[J]. IEEE Trans Nucl Sci, 1998, 45(3): 1372-1736. 被引量:1
  • 9HOPKINSON G R. Cobalt 60 and proton radiation effects on large format, 2-D, CCD arrays for an earth imaging application[J]. IEEE Trans on Nuclear Sci- ence,1992, 39(6): 1790-1796. 被引量:1
  • 10赖祖武主编..抗辐射电子学 辐射效应及加固原理[M].北京:国防工业出版社,1998:363.

二级参考文献11

共引文献19

同被引文献3

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部