摘要
采用等离子体增强化学气相沉积技术,通过改变射频功率与沉积气压两个参数来沉积非晶硅薄膜材料,并研究了变化参数对薄膜沉积速率、晶化情况、氢含量、光电学性质以及材料表面形貌等的影响.结果表明:射频功率在较低的范围内变化时,对薄膜的沉积速度影响很大,对材料的光电特性比较敏感;沉积气压升高达到一定值后,沉积速率变化不太明显,光电影响比较缓和;在低气压、小功率条件下,薄膜中出现小晶粒生长.
Amorphous silicon thin films were prepared by plasma enhanced chemical vapor deposition,the effects of the deposition rate,crystalline fraction,the content of hydrogen,the oxidation of film,surface structure,the optical and electrical properties were studied by changing the RF-power and deposition pressure.It founded that the deposition rate of thin film was greatly affected by the range of low RF-power,then the properties of optical and electrical exhibited sensitive;while the deposition pressure approached a certain value,the deposition rate varied less obviously,the properties of optical and electrical in a small changes.At low pressure,low power conditions,a small film grain growth occurs.
出处
《内蒙古师范大学学报（自然科学汉文版）》
CAS
北大核心
2015年第3期347-351,共5页
Journal of Inner Mongolia Normal University(Natural Science Edition)
基金
国家自然科学基金资助项目(51262022)
内蒙古师范大学2013年度研究生科研创新基金项目(CXJJS13043)
关键词
氢化非晶硅薄膜
射频功率
沉积气压
光电特性
a-Si：H thin film
RF-power
deposition pressure
optical and electrical
