摘要
利用射频等离子体增强化学气相沉积(PECVD)技术低温制备了氢化纳米晶硅(nc-Si:H)薄膜.通过优化沉积参数,得到晶粒尺度小于10 nm,晶态体积比为58%的nc-Si:H薄膜.对nc-Si:H薄膜的光电特性进行研究,结果表明,在100 mW/cm2的光照下,nc-Si:H薄膜的光电导率为1.5×10-3Ω-1.cm-1,室温暗电导率为8.4×10-4Ω-1.cm-1,光学带隙为1.46 eV.利用射频PECVD制备的nc-Si:H薄膜具有明显的量子点特征.
Nanocrystalline silicon（nc-Si：H） films were deposited at low temperatures by radio friquency plasma enhanced chemical vapor deposition technique （PECVD）. The nc-Si ： H thin films with the crystal grain size of smaller than 10 nm and the crystal volume fraction X, of 58% were obtained by optimizing deposition parameters. The electrical and optical properties of the nc-Si： H films were investigated,and the results showed that the nc-Si： H films have a high photo-conductivity σp of 1.5^-3Ω^-1·cm^-1 under 100 mW/cm^2 illumination,a dark-conductivity σd of 8.4^-4Ω^-1·cm^-1 at room temperature and a optical band gap of 1.46 eV. The nc-Si： H films deposited by rf-PECVD evidently have the features of quantum dot.
出处
《内蒙古师范大学学报（自然科学汉文版）》
CAS
2007年第3期296-299,共4页
Journal of Inner Mongolia Normal University(Natural Science Edition)
基金
国家自然科学基金资助项目(50662003)
