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溶胶-凝胶法制备Bi_4Si_3O_(12)薄膜的工艺参数影响研究 被引量:1

Effect of Process Parameters on Bi_4Si_3O_(12) Thin Films Prepared by Sol-Gel Method
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摘要 采用溶胶-凝胶法结合旋涂工艺,在石英玻璃衬底上制备了Bi4Si3O12(BSO)多晶薄膜。通过X射线衍射(XRD)、傅里叶变换红外光谱(FT-IR)、扫描电子显微镜(SEM)、原子力显微镜(AFM)、荧光光谱仪和紫外-可见(UV-Vis)分光光度计表征了薄膜的物相结构、微观形貌及其光学性质,系统研究了制备过程中的溶胶组成和热处理工艺参数对薄膜性能的影响。结果表明,前驱体溶胶经750℃热处理6 h可得到单相的BSO薄膜;预热处理可显著改善薄膜的形貌,降低冷却速率可明显减少薄膜裂纹,增强薄膜发光强度;在溶胶中加入乙二醇乙醚可显著提高薄膜的表面平整度;薄膜的透过率随着裂纹数量的减少明显提高。 Bi4Si3O12( BSO) polycrystalline thin films were prepared on quartz glass substrates by sol-gel route combined with the spin-coating method. The crystal structure,morphology and optical property of the BSO films were analyzed by X-ray diffraction( XRD),fourier transform infrared spectroscopy( FTIR), scanning electron microscope( SEM), atom force microscope( AFM), fluorescence spectrophotometer and ultraviolet-visible( UV-Vis) spectrophotometer. The influence of preparation conditions on morphologies and optical properties of Bi4Si3O12( BSO) thin films was investigated. The results suggest that a single-phased BSO film was obtained when the thin film precursor was annealed in a muffle furnace at 750 °C for 6 h. Pre-sintering process and reduction of cooling rate are beneficial to the improvement of microstructure and luminous intensity of BSO thin films. Addition of 2-ethoxyethanol in sols enhances the smoothness of BSO thin films by changing the reaction mechanism. The transmittance of thin films decreases with the increasing of cracks.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2015年第6期1575-1581,共7页 Journal of Synthetic Crystals
基金 上海市科研计划能力建设项目(14520500300) 国家自然科学基金面上项目(51172139)
关键词 Bi4Si3O12薄膜 溶胶-凝胶法 形貌 Bi4Si3O12 thin film sol-gel method morphology
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  • 1Martin T,Koch A.Recent Developments in X-ray Imaging with Micrometer Spatial Resolution[J].Journal of Synchrotron Radiation,2006,13(2):180-194. 被引量:1
  • 2Koch A,Raven C,Spanne P,et al.X-ray Imaging with Submicrometer Resolution Employing Transparent Luminescent Screens[J].Journal of the Optical Society of America A,1998,15(7):1940-1951. 被引量:1
  • 3Cecilia A,Rack A,Douissard P A,et al.LPE Grown LSO:Tb Scintillator Films for High-resolution X-ray Imaging Applications at Synchrotron Light Sources[J].Nuclear Instruments and Methods in Physics Research A,2011,633:S321-S323. 被引量:1
  • 4Cho Z H,Farukhi M R.Bismuth Germanate as a Potential Scintillation Detector in Positron Cameras[J].Journal of Nuclear Medicine,1977,18(8):840-844. 被引量:1
  • 5Bordun O,Kukharsky I Y,Antonyunk V,et al.Luminescence of Thin Films of Bismuth and Lead Complex Oxide Compounds[J].Radiation Measurements,2007,42(4-5):569-571. 被引量:1
  • 6Kobayahi M,Ishii M,Harada K,et al.Bismuth Silicate Bi4Si3O12,a Faster Scintillator than Bismuth Germinate Bi4Ge3O12[J].Nuclear Instruments and Methods in Physics Research A,1996,372(1-2):45-50. 被引量:1
  • 7Xu J Y,Yang B B,Zhang Y.Development of Doped Bi4Si3O12Crystals for Scintillation,Laser and LED applications[J].Materials Focus,2015,4:20-27. 被引量:1
  • 8Xiong Z Y,Xu J Y,Zhang Y,et al.Emission Spectra and Thermoluminescence of Rare-earth-doped Bismuth Silicate Crystals Grown by Modified Bridgman Method[J].Journal of Crystal Growth,2014,401:305-307. 被引量:1
  • 9Xiong W,Zhou Y,Guo F Y,et al.A study on Segregation Layers of Bi4Si3O12Crystal Grown by the Bridgman Method[J].Journal of Crystal Growth,2013,377:160-163. 被引量:1
  • 10Jiang H,Rooh G,Kim H J,et al.Scintillation Properties of Bi4(Ge1-xSix)3O12Single Crystals Grown by Czochralski Method[J].Journal of Crystal Growth,2013,367:73-76. 被引量:1

同被引文献27

  • 1余锡宾,吴虹.正硅酸乙酯的水解、缩合过程研究[J].无机材料学报,1996,11(4):703-707. 被引量:91
  • 2PADTURE N P, GELL M, JORDAN E H. Thermal barrier coatings for gas-turbine engine applications [J]. Science, 2002, 296(5566): 280-284. 被引量:1
  • 3SMITH J A, CIMA M J, SONNENBERG N. High critical current density thick MOD-derived YBCO films [J]. IEEE Transactions on Applied Superconductivity, 1999, 9(2): 1531-1534. 被引量:1
  • 4LI Q, DONG S, WANG Z, et al. Fabrication and properties of 3-D C1/SiC-ZrC composites, using ZrC precursor and polycarbosilane [J]. Journal of the American Ceramic Society, 2012, 95(4): 1216-1219. 被引量:1
  • 5WILK G D, WALLACE R M. Stable zirconium silicate gate dielectrics deposited directly on silicon [J]. Applied Physics Letters, 2000, 76(1): 112-114. 被引量:1
  • 6YAMAMOTO O, SASAMOTO T, INAGAKI M. Antioxidation of carbon-carbon composites by SiC concentration gradient and zircon overcoating [J]. Carbon, 1995, 33(4): 359-365. 被引量:1
  • 7WON S J, KIM J R, SUH S, et al. Zirconium-assisted reaction in low temperature atomic layer deposition using Bis(ethyl- methyl-arnino)silane and water [J]. Applied Surface Science, 2011, 257: 10311-10313. 被引量:1
  • 8LEMBERGER M, PASKALEVA A, ZURCHER S, et al. Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors [J]. Microelectronic Engineering, 2004, 72: 315-320. 被引量:1
  • 9QI W J, NIEH R, DHARMARAJAN E, et al. Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application [J]. Applied Physics Letters, 2000, 77: 1704-1706. 被引量:1
  • 10LIU J, CAO L Y, HUANG J F, et al. A ZrSiO4/SiC oxidation protective coating for carbon/carbon composites [J]. Surface and Coatings Technology, 2012, 206(14): 3270-3274. 被引量:1

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