期刊文献+

芯片堆叠封装耐湿热可靠性 被引量:2

Reliability of the Stacked Dices Package under the Hygrothermal Environment
下载PDF
导出
摘要 采用Abaqus软件模拟了CPU和DDR双层芯片堆叠封装组件在85℃/RH85%湿热环境下分别吸湿5,17,55和168 h的相对湿气扩散分布和吸湿168 h后回流焊过程中湿应力、热应力和湿热应力分布,并通过吸湿和回流焊实验分析了该组件在湿热环境下的失效机理。模拟结果表明,在湿热环境下,分别位于基板和CPU、CPU和DDR之间的粘结层1和2不易吸湿,造成粘结层的相对湿度比塑封材料低得多,但粘结层1的相对湿度比粘结层2要高。吸湿168 h后,在回流焊载荷下湿应力主要集中在芯片DDR远离中心的长边上,而最大湿热应力和热应力一样位于底层芯片CPU的底角处,其数值是单纯热应力的1.3倍。实验结果表明,界面裂纹及分层集中在底层CPU芯片的边角处和芯片、粘结层和塑封材料的交界处,与模拟结果相一致。 The relative humidity distribution of CPU and DDR stacked dices package module under the 85 ℃ /RH85% hygrothermal environment for 5,17,55 and 168 h and hygro-mechanical stress,thermo-mechanical stress,and hygro-thermo-mechanical stress distribution for 168 h during reflow process were simulated by Abaqus. Moisture absorption and reflow soldering experiments were performed to investigate the failure mechanism of this module in the hygrothermal environment. The results show that the adhesive layer 1 and 2 sandwiched between the substrate and CPU,CPU and DDR respectively have much lower moisture absorption rate in absorbing moisture under the hygrothermal environment,so the relative humidity of the adhesive layers are much lower than that of epoxy molding compounds. However,the relative humidity of the adhesive layer 1 is much higher than that of the adhesive layer 2. After absorbing moisture 168 h,hygro-mechanical stress mainly appears at long side away from the center of the DDR chip during reflow process. However,the maximum hygro-thermo-mechanical stress and thermo-mechanical stress locate at the die corner of the bottom CPU,and the hygro-thermo-mechanical stress is 1. 3times of pure thermo-mechanical stress. It is observed that the interface cracks and delamination appear at the interfaces of the die corner of the bottom CPU chips,adhesive layers and epoxy molding compounds after moisture absorption and reflowing experiment,and the experiment results are agreed with simulation results.
出处 《半导体技术》 CAS CSCD 北大核心 2014年第7期539-544,共6页 Semiconductor Technology
基金 中国博士后科学基金资助项目(2014M552193) 广东省科技计划资助项目(2012B020313004) 中央高校基本科研业务费专项资金资助项目(2014ZB0032) 广东高校优秀青年创新人才培养计划资助项目(LYM11077)
关键词 芯片堆叠封装 湿气扩散 湿热应力 界面分层 有限元分析(FEA) stacked dices package moisture diffusion hygro-thermo-mechanical stress interface delamination finite element analysis(FEA)
  • 相关文献

参考文献14

二级参考文献32

  • 1顾靖,王珺,陆震,俞宏坤,肖斐.芯片叠层封装的失效分析和热应力模拟[J].Journal of Semiconductors,2005,26(6):1273-1277. 被引量:23
  • 2翁寿松.3D封装的发展动态与前景[J].电子与封装,2006,6(1):8-11. 被引量:13
  • 3别俊龙,孙学伟,贾松良.吸收湿气对微电子塑料封装影响的研究进展[J].力学进展,2007,37(1):35-47. 被引量:13
  • 4毕克允,张宋岳,高尚通.微电子封装技术[M].合肥:中国科学技术大学出版社,2003. 被引量:6
  • 5HALEH A,CRAIG H, MICHAEL G P, et al. A comparison of the theory of moisture diffusion in plastic encapsulated mieroelectronics with moisture sensor chip and weight gain measurements [ J ]. IEEE Trans on Components and Packaging Teeh, 2002,25 ( 1 ) : 132-139. 被引量:1
  • 6CHIANG S S, SHUKLA R K. Failure mechanism of die cracking due to imperfect die attachment [C]//Proc of 34^th Electronics Components Conf. New Orleans, USA, 1984:195-202. 被引量:1
  • 7CLEVENGER L A, ARCOT B, ZIEGIER W, et al. Interdiffusion and phase formation in Cu(Sn)alloy films[J]. J. Appl. Phys., 1998,83:90-99. 被引量:1
  • 8HWANG C W, SUGANUMA K, KISO M, et al. Interface microstructures between Ni-P alloy plating and Sn-Ag-(Cu) lead-free solders. J Mater Res 2003,18: 2540-2543. 被引量:1
  • 9TEE T Y,ZHONG Z W. Integrated vapor pressure, hygroswelling, and thermo-mechanical stress modeling of QFN package during reflow with interfacial fracture mechanics analysis [J]. Microelectron Reliab,2004,44:105- 114. 被引量:1
  • 10CHENG C C, CHIEN C H, LIN J H, et al. Thermochemical reaction of ZrOx (Ny) interfaces on Ge and Si substrates [J. Applied Physics Letters, 2006,89 ( 1 ) : 012905. 被引量:1

共引文献19

同被引文献18

引证文献2

二级引证文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部