摘要
使用中频脉冲磁控溅射技术分别在Si(111)、玻璃以及高速钢基底上沉积AlN薄膜.利用X射线衍射、X射线光电子能谱、扫描电镜、紫外荧光、FTIR、精密阻抗分析仪等研究了薄膜的结构、光学及电学性质.结果表明,生成的(002)取向的多晶AlN薄膜在可见光区域平均透过率超过75%,在紫外区域也具有较高的透过率,在低频交流区域具有良好的绝缘性.
AlN thin films have been successfully prepared on Si (111), glass and high-speed steel (HSS) substrates by middle frequency magnetron sputtering. XRD,XPS,SEM, UV-fluorescence spectroscope, FTIR and impedance analysis are employed to characterize AlN thin films. The high c-axis-oriented AlN films have higher transmittance in UV-visible light region. The impedance analysis confirmed that the AlN films are good insulators in low frequency ac region.
出处
《武汉大学学报（理学版）》
CAS
CSCD
北大核心
2002年第3期339-342,共4页
Journal of Wuhan University:Natural Science Edition
基金
国家自然科学基金(50175082)
湖北省科技计划资助项目(2002P0102)
关键词
中频脉冲磁控溅射
制备
氮化铝薄膜
X射线衍射
透光性
AlN thin films
middle frequency reactive sputtering
X-ray diffrection
transmittance
