摘要
在不同氮气浓度、不同溅射气压和衬底温度为20～370℃的条件下,分别在多种衬底上采用反应磁控溅射法沉积AlN薄膜。X射线衍射图谱表明:温度大于180℃时可在多种衬底上沉积出具有c轴择优取向的纤锌矿AlN薄膜。衬底温度和溅射时间的增加有利于薄膜结晶性的改善。1.5Pa的纯氮气气氛和Si(100)衬底是最佳择优生长条件。由紫外-可见光透射谱计算得到:在石英衬底上沉积的薄膜折射率为1.80～1.85,膜厚约为1μm、光学能隙为6.1eV。原子力显微镜照片表明:在Si(100)衬底上制备的薄膜表面平滑,均方根粗糙度为2.2～13.2nm。
AlN thin films were grown on various substrates using reactive magnetron sputtering deposition with various nitrogen concentration,various sputtering pressure and substrate temperatures from 20 ℃ to 370 ℃.The X-ray diffraction spectra show that highly c-axis preferred wurtzite AlN films deposited on various substrates can be obtained at substrate temperature above 180 ℃.The crystallizability of AlN is improved as substrate temperature and sputtering time increasing.The optimal growth condition is the substrate of Si（100）,pure nitrogen with sputtering pressure of 1.5 Pa.Optical band gap （ Eg =6.1 eV）,refractive indexes （1.80-1.85） and thickness （about 1 μm） of the film can be calculated and obtained by using the ultraviolet-visible optical transmission spectrum of the film deposited on quartz.The atomic force microscope images showed that the surfaces of the films deposited on Si（100） at different temperatures are smooth and the root mean square（RMS） roughness was between 2.2-13.2 nm.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第1期190-196,共7页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.10864004
No.50862008)
新疆大学博士启动基金(No.BS060110
No.BS080109)
关键词
氮化铝
磁控反应溅射
择优取向
AlN
magnetron reactive sputtering
preferred orientation
