摘要
阐述了负电子亲和势 (NEA)光电阴极的评估原理 ,用NEA光电阴极的量子产额理论曲线对测试获得的实验曲线进行拟合 ,可以获得光电阴极的表面逸出概率、载流子扩散长度和后界面复合速率等参数。介绍了NEA光电阴极激活和评估系统 ,利用该系统对国产的反射式GaAs基片进行了激活和评估 ,文中给出并分析了测试结果。
The mechanism of property evaluation for negative electron affinity (NEA) photocathodes was discussed. The parameters such as surface escape probability, electron diffusion length and back-interface recombination velocity can be obtained by simulation of the quantum yield. The system which can be used to excite and evaluate GaAs photo-cathodes was introduced. The reflective GaAs substrates made in Chinaware excited and evaluated. The on-line measuring results of spectral response of NEA photocathode were given. The spectral parameters and integration sensitivity of NEA photocathode were described.
出处
《真空科学与技术》
EI
CSCD
北大核心
2001年第6期445-447,451,共4页
Vacuum Science and Technology
