摘要
利用自行研制的光谱响应测试仪对国产三代微光管进行了光谱响应测试,给出了三代微光管的光谱响应特性,利用曲线拟合方法估算了GaAs光电阴极材料的性能参数。结果显示该三代微光管的积分灵敏度约800μA/lm左右,所选GaAs材料的电子扩散长度为2.0μm,与1.6μm的阴极厚度相当,电子表面逸出几率为0.38,后界面复合速率为106cm/s。发现GaAs材料的扩散长度偏低,以及阴极的后界面复合速率太大是限制三代微光管光电发射性能进一步提高的重要原因。
The spectral response measurement of third-generation LLL tube was tested by use of self-developing spectral response measurement instrument. Spectral response characteristics of third-generation LLL tube were obtained, and the material performance parameters of GaAs photocathode were calculated by curve simulation method. The results show that integral sensitivity are about 800μA/lm, electron diffusion length of GaAs materials are 2.0μm, comparative to the photocathode thickness 1.6μm. Probability of electron escape are 0.38, velocity of back-lnterface recombination velocity are 106cm/s. It can be detected that low diffusion length and high back-interface recombination velocity are the main reason restricting the improvement of photoemission performance of third-generation LLL tube.
出处
《光学技术》
EI
CAS
CSCD
北大核心
2006年第3期364-366,共3页
Optical Technique
关键词
微光管
光谱响应
光电阴极
GAAS
NEA
low-light-level （LLL） tubes
spectral response
photocathode
GaAs
NEA
