摘要
基于泊松方程和拉普拉斯方程,结合双栅MOSFET的边界条件,采用牛顿-拉夫逊迭代法推导了双栅MOSFET亚阈值区全沟道的电势解析解。在亚阈值区电流密度方程的基础上,提出了双栅MOSFET的一个亚阈值电流模型,并获得了亚阈值摆幅的解析公式。通过对物理模型和数值模拟结果进行比较,发现在不同的器件结构参数下,亚阈值摆幅之间的误差均小于5%。
Based on Poisson＇s equation and Laplace equation, an analytical subthreshold full- channel potential equation of double-gate MOSFETs was derived by combining the boundary con- dition with the Newton-Raphson iteration method. And then, a subthreshold current model of double-gate MOSFETs was presented, and the analytical subthreshold swing equation was de- duced from the subthreshold current density equation. Finally, the comparison between the pro- posed device model and the numerical simulation results shows that the relative error of sub- threshold swing is within 5% with different device structure parameters.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第2期101-105,共5页
Research & Progress of SSE
基金
专用集成电路与系统国家重点实验室开放研究课题基金资助项目(11KF003)
中央高校基本科研业务费专项资助项目(JUS-RP51323B,JUSRP211A37)
江苏高校优势学科建设工程(PAPD)
江苏省六大人才高峰资助项目(DZXX-053)
