摘要
通过磁控溅射技术在玻璃基板上制备氧化铟镓锌（IGZO）薄膜，为了研究不同氧分压对IGZO薄膜结构及光电特性的影响，在不同的氧分压0，0．015，0．06和0．24Pa下制备了不同样品。样品的沉积速率、成分结构、面电阻及光电性质分别用椭偏仪、X射线光电子能谱（XPS）和四点探针等方法进行了测量。实验结果表明，随着氧分压的增大，IGZO薄膜的沉积速率呈下降趋势，不同氧分压的IGZO薄膜的元素比例（In：Ga：Zn）差异不大，在可见光的范围内其氧分压为0Pa以上时，IGZO薄膜平均透过率均超过80％，阻值随氧分压的增加而增大。制作了不同氧分压以IGZO为沟道层的薄膜晶体管，其迁移率为5．93～9．42cm^2·V^-1·s^-1，阈值电压为3．8～9．2V。
tron sputtering tical-electrical O, 0.015, 0 cal properties probe method ： Indium gallium zinc oxide （IGZO） films were deposited on glass substrates by magne- ~ In order to study the effects of different oxygen partial pressures on the structures and op- properties of IGZO films, the samples were prepared under four oxygen partial pressures of 06 and 0.24 Pa. The deposition rate, structure, surface resistance, optical and electriwere measured by ellipsometer, X-ray photoelectron spectroscopy （XPS） and four point The experimental results show that the deposition rate of IGZO films decreases with the increase of oxygen partial pressures, the atomic composition （In ： Ga ： Zn） behaves no difference, the average transmittance of IGZO films is over $0% in visible range when the oxygen partial pressure is more than 0 Pa, and the resistance of the IGZO films increases with the increase of oxygen partial pressures. The thin film transistors with the channel layer of IGZO under different oxygen partial pressure are prepared, the mobility of the transistors is 5.93-9. 42 cm2· V-1 · s-1, the threshold voltage is 3.8-9. 2 V.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第2期132-136,共5页
Semiconductor Technology
关键词
氧化铟镓锌(IGZO)薄膜
薄膜晶体管(TFT)
磁控溅射
氧分压
光电特性
indium gallium zinc oxide （IGZO） film
thin fihn transistor （TFT）
magneironsputtering
oxygen partial pressure
optical and electrical properties
