摘要
采用脉冲直流(Pulsed DC)方式和不同的单组份气体(Ar、O2、N2)溅射制作IGZO,研究了缺氧(Ar)、富氧(O2)、氧替代(N2)三种情形下的IGZO-TFT特性。通过AES、XRD、AFM等分析手段,考察了不同气体制备的IGZO膜以及相应靶材的成分及结构,发现不同的溅射气体对IGZO膜的成分比例和电学结构具有重要的影响。实验结果表明,Ar-IGZO TFT在退火后具有良好的特性,S值为1 V/dec,迁移率可达8.3 cm2/Vs,开关比Ion/Ioff≥105。
Based on different IGZO TFTs have been studied and the IGZO films were deposited using Pulsed DC sputtering method with various single-component sputtering gases（Ar,O2,and N2）,including lack-oxygen（Ar）,rich-oxygen（O2）,oxygen-replacement（N2）types.By employing the AES,XRD,AFM analysis methods,the composition and micro-structure of the IGZO films and the corresponding target cross sections were investigated.It indicates that the sputtering gases affect significantly on the properties of the IGZO films.The results show that after annealing,Ar-IGZO TFT has good characteristics,such as S slope 1 V/dec,mobility 8.3 cm2/Vs,Ion/Ioff≥105.
出处
《电子器件》
CAS
北大核心
2012年第2期125-129,共5页
Chinese Journal of Electron Devices
