摘要
本文通过电化学阳极氧化方法制备了多孔硅 ,并对它的微观形貌和红外吸收光谱进行分析 ,结果 表明多孔硅的微观结构与电流密度、腐蚀液配比有关 .随着电流密度的升高 ,氢氟酸浓度的增大 ,多孔硅的微观 结构将从“海绵”状转变成“树枝”状 .随腐蚀时间延长 ,Si H键和Si O键明显地增强 。
In this paper,porous silicon was fabricated by an electrochemical approach,and its morphology was analyzed by SEM.The results showed that microstructure of porous silicon was related to current density and eroding composition,and along with increase of current density and concentration of hydrofluoric acid, morphology of porous silicon would change from spongy to branched. And both absorption peaks of Si O bond and Si-H bond enhanced while etch time is prolonged,which were beneficial to photoluminescence of PS.
出处
《温州师范学院学报》
2000年第3期11-13,共3页
Journal of Wenzhou Teachers College(Philosophy and Social Science Edition)
关键词
多孔硅
制备
微结构分析
半导体
porous silicon fabrication analysis of microstructure
