摘要
在ITO衬底上电沉积了Co掺杂ZnO薄膜。X射线粉末衍射(XRD)和扫描电子显微镜(SEM)结果表明Co掺杂并没有改变ZnO的六角纤锌矿结构,但可以在一定程度上改变晶体的形貌。室温光致发光光谱(PL)结果表明Co掺杂导致薄膜的带隙变窄。磁性测试结果表明,10%Co掺杂样品室温下呈现顺磁性,而5%Co掺杂样品在室温下呈现铁磁性,我们认为其铁磁性是由Co掺杂引起的缺陷导致的。
Co-doped ZnO films were fabricated by using electrodeposition method on the ITO substrates. X-ray diffraction（XRD） and scanning electron microscope（SEM） results indicate that Co-doping doesnt change the hexagonal wurtzite crystal structure of obtained ZnO films obviously. The photoluminescence spectra indicate that Co-doping cause the red-shift of the band gap. The magnetic properties of the fdms were investigated by VSM measurement at room temperature. The results indicate that 10% Co-doped ZnO thin film represents paramagnetism but 5% Co-doped ZnO thin film shows ferromagnetism, and the ferromagnetism is ascribed to the defects caused by Co-doping.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第4期742-746,共5页
Journal of Synthetic Crystals
基金
河南省自然科学基金项目(112300410121
112300410188)
南阳师范学院专项项目(ZX2010010)
