摘要
在不同衬底温度条件下采用RF磁控溅射法在石英玻璃上沉积Al-H共掺杂ZnO薄膜。对所有样品进行晶体结构、表面形貌、电学、光学以及室温光致发光性能分析。结果表明:随着衬底温度的升高,ZnO薄膜的结晶度增加,晶粒增大,薄膜致密度增加;薄膜表面起伏变化减小;同时,电阻率最低达到7.58×10-4Ω·cm,透过率保持在75%左右。所有ZnO薄膜样品都以本征发光为主,Al-H共掺杂在一定程度降低ZnO薄膜缺陷发光的强度;随着衬底温度的升高,ZnO薄膜的本征发光强度明显增大;同时在能量为3.45 eV附近观察到了一个紫外发光峰。
M-H co-doped ZnO thin films were deposited on the quartz glass at different substrate temperatures by RF megnetron sputtering. The crystal structure, surface morphology, electrical, optical and photoluminescence （PL） performance of ZnO： A1-H thin films were analyzed. The results of XRD and SEM show that the crystallinity of ZnO films increases, the size of ZnO particle increases and the density of thin films increases as the substrate temperature increasing, the surface undulation changing of films decreases. The lowest resistivity reached 7.58 ~ 10-4 ~ . em and the transmittance keeps about 75%. According to the PL spectra, the intrinsic luminescence of all samples were dominated, A1-H co-doped can decrease the ZnO films defects and the luminescence intensity of defects. As the substrate temperature increasing, the intrinsic luminescence intensity of ZnO films increased; Meanwhile, the ultraviolet photoluminescenee peak was observed at 3.45 eV with all ZnO： M-H thin films samples.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第12期2583-2588,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(61066003)
江西省科技支撑计划项目(2010BGA01100)
江西省对外合作资助项目(20111BDH80031
20132BDH80025)
江西省自然科学基金(20111BAB202005
20132BAB202001)
江西省主要学科学术和技术带头人培养计划项目(20123BCB22002)
江西省高等学校科技落地计划(KJLD12085)
江西省教育厅科技资助项目(GJJ12494
GJJ13643
GJJ13625)
