摘要
氧化锌(ZnO)是一种极其重要的半导体材料,具有宽带隙(3.37eV)和高激子结合能(60meV),适合制作短波长发光二极管和激光二极管。综述了体块ZnO单晶的主要生长方法:化学气相输运法、水热法、助溶剂法的原理和优缺点;着重探讨了水热法和助溶剂法的生长参数及所生长ZnO单晶的特征;结合KOH+H2O体系,论述了助熔剂法的反应机理。介绍了体块ZnO单晶中存在的缺陷及其对ZnO性质的影响。
Zinc oxide(ZnO) is an exceptionally important semiconductor material.Due to the wide band gap energy(3.37eV) and large exciton-binding energy(60 meV),it is suitable for making short-wavelength light-emitting diodes and laser diodes.Bulk ZnO single crystal growth methods,including chemical vapor transport,the hydrothermal process and the flux method,are summarized.The principles as well as the advantages and disadvantages of these methods are reviewed.The growth parameters and characteristics of ZnO single c...
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2009年第2期325-330,共6页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金委重大基金(11250005150502)资助项目
关键词
氧化锌单晶
化学气相输运法
水热法
助熔剂法
缺陷
zinc oxide single crystal
chemical vapor transport method
hydrothermal method
flux method
defect
