摘要
近年来,基于ZnO稀磁半导体在自旋电子器件方面的潜在应用价值,过渡金属掺杂的ZnO材料被广泛研究。但由于p型ZnO材料的制备非常困难,获得具有室温以上居里温度的Mn掺杂p型ZnO基稀磁半导体仍然是个难题。在N-In共掺杂成功实现ZnO薄膜p型掺杂的前期研究基础上,本研究采用超声喷雾热解(USP)法在Si基底上制备了Zn1-xMnxO系列薄膜样品。X射线衍射表明所有ZnO薄膜样品都具有纤锌矿结构,没有发现其他物相的衍射峰存在。薄膜形貌研究发现,样品中的颗粒分布均匀。磁性测量表明N-Mn-In掺杂的样品显示出室温铁磁性。对N-Mn共掺杂和N-Mn-In掺杂的样品进行热处理后,发现薄膜的铁磁性能与薄膜中的空穴载流子具有直接的关联,这一现象与Mn掺杂的p型ZnO会显示室温铁磁性的理论预测是一致的,并用束缚磁性极化子模型解释了ZnO薄膜的铁磁性来源。
In recent years, transition-metal doped ZnO materials have been intensively investigated as the diluted magnetic semiconductors （DMSs） due to their potential application in spintronics. However, until recently Mn doped p-type ZnO based DMSs with the Curie temperature （Tc ） at or above room temperature have not been achieved easily, because of the diiticulty in preparing p-type ZnO. Based on the previous success in achieving N-In codoped p-type ZnO films, in this study, Zn1-x MnxO films are prepared on Si substrates by ultrasonic spray pyrolysis. XRD results show all ZnO films exhibit a hexagonal wurzite structure, and no diffraction peaks from other phases are found. The surface photographs show the films are composed of uniform particles. The ferromagnetic measurements display N-Mn-In doped ZnO films show obvious room-temperature ferromagnetism. As annealed at 500 ℃, the ferromagnetic properties of N-Mn eedoped and N-Mn-In doped ZnO fdms were found to be related with the hole carrier in ZnO films, which is consistent with the theoretical predict that Mn doped p-type ZnO films will achieve a ferromagnetism above room-temperature. In this study, the origin of room-temperature ferromagnetism in ZnO films was explained with the bound magnetic polaron model.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2013年第4期659-663,共5页
Journal of Synthetic Crystals
基金
上海应用技术学院大学生科技创新项目资助(DJ2010-51)
关键词
超声喷雾热解法
稀磁掺杂
P型ZNO薄膜
ultrasonic spray pyrolysis
diluted magnetic doping
p-type ZnO flms
