摘要
利用微波光电导衰减方法,研究磷吸杂、热氧化以及氮化硅钝化后快速热退火等工艺对物理冶金法制备的UMG硅片少子寿命的影响。实验发现:磷吸杂可有效改善冶金法硅片的少子寿命,其优化的条件是950℃处理4h;经热氧化处理后,少子寿命有所下降;氮化硅钝化后快速热退火处理可提高少子寿命,其优化的条件为800℃退火30s。
The effect of phosphorus gettering, thermal oxidation and rapid thermal annealing （RTA） on the minori- ty carrier lifetime of upgraded metallurgical grade （UMG） silicon wafers by microwave photo-conductive decay were investigated. Results s.how that the phosphorus gettering is very effective in improving the minority carrier lifetime of UMG silicon wafers, and the best effect of phosphorus gettering has been achieved at 950℃, 4 hours. But the mi- nority carrier lifetime decreased after thermal oxidation. In the case of RTA, the minority carrier lifetime of passivated UMG silicon wafers by SiN~ is somewhat increase, the optimal conditions are 800℃, 30 seconds.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2013年第1期45-49,共5页
Acta Energiae Solaris Sinica
基金
福建省重大科技专项专题(2007HZ0005-2)
国家自然科学基金(61076056)
福建省经贸委资助项目
关键词
冶金法硅片
少子寿命
磷吸杂
热氧化
快速热处理
UMG silicon wafer
minority carrier lifetime
phosphorus gettering
thermal oxidation
rapid thermalannealing
