摘要
采用化学腐蚀液织构了经磷吸杂处理后的多晶硅片。利用SEM分析了化学腐蚀后多晶硅表面形态,并通过反射谱测试分析了多晶硅片表面的陷光效果。实验结果表明:经酸腐蚀后的样品表面分布着均一的"蚯蚓状"的腐蚀坑,且反射率较低。在400～1 000nm波长范围内,反射率可达22.75%;生长了SiNx薄膜后,反射率减小至8.33%,比原始硅片的反射率低20.96%。
After phosphorus gettering pretreatment, the low-cost polycrystalline silicon （poly-Si） wafers are textured by chemical etching solution. The poly-Si surface and its light trapping were analyzed by scanning electron microscope （SEM） and reflection spectrum, respectively. Results show that the surface etched by the acid solution was distributed with uniform earthworm-like etched-pits, and it had a very low reflectance. The reflectivity of the sample can reach 22.75% within the wavelength of 400-1 100 nm. After the deposition of SiNx thin films, the reflectivity can be minimized to 8.33%, which is 20.96% lower than the bare Si wafer.
出处
《半导体光电》
CAS
CSCD
北大核心
2011年第6期825-827,873,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金项目(61076056)
福建省重大专项项目(2007HZ0005-2)
关键词
低成本多晶硅
磷吸杂
织构
酸腐蚀
low-cost polycrystalline silicon
phosphorus gettering
texturing
acidic etching
