摘要
介绍一种宽带高效放大器设计方法,并基于GaN HEMT器件研制了宽带高效功率放大器。采用源牵引和负载牵引方法获得适应宽带条件的最佳源阻抗和负载阻抗,然后综合宽带匹配网络并实现测试电路设计。实测结果表明,该放大器在0.9～2.7GHz工作频带范围内,放大器输出功率均大于10W,工作效率在51%～72%之间,增益大于13dB。为改善放大器线性度指标,采用商用预失真芯片搭建简单的预失真电路对放大器进行线性化校正,并给出了详细的测试结果。
A design method of high efficiency wideband power amplifier is presented. A practical high efficiency wideband power amplifier circuit using GaN transistor is built. A method based on source-pull and load-pull simulation has been used to obtain optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks. Measurement results show that, across 0.9 - 2.7GHz, the amplifier circuit is able to deliver 10W outpout power with 13dB power gain and obtain 51% -72% drain efficiency. Furthermore, a simple predistortion solution is used to increase the linearity of power amplifier, and elaborate experimental results are offered.
出处
《微波学报》
CSCD
北大核心
2012年第6期76-79,88,共5页
Journal of Microwaves
关键词
高效率
宽带
GAN
功率放大器
预失真
high efficiency, wideband, GaN, power amplifier, predistortion
