摘要
研究了ＧａＡｓ功率ＭＥＳＦＥＴ的小信号特性、大信号特性和其宽带匹配网络。选用ＴＷＴ－２型功率器件，设计研制出了单级宽带功率放大器。在６～１８ＧＨｚ的工作频率范围内，小信号增益等于５．０±１．０ｄＢ，１ｄＢ压缩输出功率等于２５．０±０．８ｄＢｍ，输入输出驻波比小于２．５。
The small-and large-signal characterization,as well as its broadband matching network,of GaAs power MESFET are studied.A single stage broad band power amplifier has been developed.1 dB compression output power across 6～18GHz of 25.0 dBm with an associated gain of5.0 dB,as well as low VSWR less than 2.5,were achieved with one balance amplifier module.The transistor used in the study has gate dimension of 600μm×O.3μm. The RF performance and characteriation of the device are discused in detail.
出处
《半导体情报》
1996年第1期1-8,共8页
Semiconductor Information
关键词
信号特性
匹配网络
宽带
功率放大器
Signal characterization,Matching network,Broadband power amplifier
