摘要
InGaN基发光二极管(LED)芯片大电流密度下效率的下降影响了其在功率型器件方面的应用,因此效率下降的原因和克服的方法成了当前的研究热点。综述了近年来研究者提出的光效下降效应的几种产生机制,包括Read-Shockley-Hall(RSH)复合、俄歇复合、载流子局域化、极化电场、载流子注入效率及热效应等。同时介绍了一些克服光效下降效应的方法。
Since the efficiency droop at the high current density of the InGaN-based light-emitting diodes （LEDs） influences the application of power-LEDs, the origin and the overcoming method of the efficiency droop have become a hotspot. Several possible mechanisms are discussed, such as Read-Shockley-Hall （RSH） recombination, Auger recombination, carrier localization, polarization field, efficiency of injected carries and heat effect. Some methods for overcoming efficiency droop are also discussed.
出处
《激光与光电子学进展》
CSCD
北大核心
2012年第12期15-21,共7页
Laser & Optoelectronics Progress
