摘要
设计了InGaN/GaN超晶格垒层替代p-GaN和n-GaN附近传统GaN垒层的InGaN/GaN多量子阱(MQW)发光二极管(LEDs)结构。通过数值方法模拟出两种LED结构的光功率-电压(L-V)曲线、电致发光(EL)谱、能带图、电子浓度分布和辐射复合速率。结果表明InGaN/GaN超晶格替代n-GaN附近GaN垒层的LED结构比替代p-GaN附近GaN垒层的LED显示出更高的发光强度。这种发光增强的原因是InGaN/GaN超晶格替代n-GaN附近GaN垒层可以提高电子注入效率和辐射复合速率。
InGaN/GaN superlattice （SL） barrier near p-GaN and n-GaN are designed to replace the conventional GaN barrier of InGaN/GaN multiple quantum well （MQW） light-emitting diodes （LEDs）. The light- voltage performance curves, electroluminescence （EL） characteristics, energy band diagrams, electron concentration and radiative recombination rate of LEDs with SL barrier near p- GaN and n- GaN have been studied numerically. The results indicate that the InGaN/GaN LED with SL barrier near n-GaN improves light output performance mane than that near p-GaN. The improved performance is due to the enhanced injection efficiency of electrons and radiative recombination rate.
出处
《激光与光电子学进展》
CSCD
北大核心
2014年第3期167-170,共4页
Laser & Optoelectronics Progress
基金
江苏省自然科学基金(11074280
BK2011436)
