摘要
采用W70Cu30单靶磁控溅射与纯W、纯Cu双靶磁控共溅两种工艺,在多种基材上制备W-Cu薄膜,分析了薄膜的宏观形貌和组织结构。分析结果表明:单靶磁控溅射时,控制靶电压520V,溅射电流0.8～1.2A,Ar气流量25mL/min(标准状态),可在玻璃基体上镀得W-Cu薄膜,但退火时如温度过高,会使W和Cu两种元素原子偏聚加重;双靶磁控溅射时,控制Ar气流量20mL/min(标准状态),Cu靶电流0.7A,W靶电流1.2A,溅射时间3600s,可在硅基和玻璃基上镀得W-Cu薄膜,但在石墨基体、陶瓷基体及45钢基体上的镀膜效果不理想。
W-Cu films were prepared on a variety of substrate by single target magnetron sputtering of W70Cu30 and pure W, pure Cu dual-target magnetron co-sputtering two processes. The results show that when use the single tar get magnetron sputtering, the control target voltage is 520 V, sputtering current is 0.8-1.2 A, the gas flow of Ar is 25 mL / min （standard state）, the W-Cu film can be plated on a glass substrate. The annealing temperature is too high can also increase W and Cu atom segregation. With dual-target magnetron co-sputtering, the control Ar gas flow rate is 20 mL/min （standard state）, Cu target current is 0.7 A, W target current is 1.2 A, sputtering time is 3600 s, W-Cu thin films are plated on the silicon and glass substrates, but the result is not ideal in the coating on the graphite matrix, ceramic matrix, and 45 steel substrate.
出处
《表面技术》
EI
CAS
CSCD
北大核心
2012年第4期42-45,共4页
Surface Technology
基金
陕西省教育厅自然科学基金资助项目(11JK0813)
关键词
W-Cu薄膜
磁控溅射
单靶
双靶
W-Cu film
magnetron sputtering
single-target
dual-target
