摘要
用射频溅射装置制备了La Zn替代磁铅石型锶铁氧体 (SrM)薄膜 (LaxSr1 xZnxFe12 xO19,0≤x≤ 0 4) ,通过对样品微结构及磁性的研究 ,发现替代可以有效控制薄膜中晶粒的生长 ,合适的替代量 (x =0 4)可得到平均尺寸大约为 12nm的六角片状晶粒 .饱和磁化强度Ms 随替代量x的增加出现极大值 ,而矫顽力Hc 则呈上升趋势 .同时替代使薄膜室温下的矫顽力温度系数 dHcdT rt得到显著改善 ,从正份样品的 430Am 1K 1降到了大约 - 40Am 1K 1(x =0 4) .
La Zn doped M type Sr ferrite thin films with various doping concentration were prepared by conventional rf diode sputtering. La Zn doping reduces the grain growth rate, so that fine grains with mean grain size about 12nm were prepared with superior magnetic properties. It is found that suitable amount of La Zn substitution may increase the M s of the films, and modify the tempareture coefficient of coercivity, while H c increases with increasing concentration of La Zn.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第8期1595-1599,共5页
Acta Physica Sinica
