摘要
研究用BP212正性光刻胶(浸泡氯苯)、AZP4620正性光刻胶(浸泡氯苯)、AZ5214E反转光刻胶光刻后的图形剥离金属的难易度及图形质量.用扫描电镜(SEM)观察不同光刻胶及浸泡氯苯后的侧壁图形,并分析不同侧壁图形的形成机理,找出最佳工艺参数,并应用于射频MEMS开关制作中的金属剥离.
The lift-off processes of BP212 positive photoresist （and chlorobenzene treatment） and AZP4620 positive photoresist （and chlorobenzene treatment） were studied. AZ5214E image-reversal photoresist was also studied. Side wall graphics were observed using scanning electron microscope （SEM）. The forming mechanism of different lateral wall pattern was analysed. The optimum process parameters were found and used in metal lift-off in RF MEMS switches.
出处
《苏州市职业大学学报》
2012年第2期10-13,共4页
Journal of Suzhou Vocational University
基金
国家青年基金资助项目(60301006)
福建省自然科学基金资助项目(A0310012)
