摘要
在GaAs IC的实际制作中,通过采用氯代苯对AZ-1350J光刻胶进行表面韧化处理,得到一近似的负窗孔,并在二次连线时,成功地剥出了最小间距为4μm和最细线条为3μm的TiPtAu条。
An approximate negative window Was obtained by modifying the surface of AZ-1350 positive photoresist with chlorobenzene in GaAs IC actual work. TiPtAu line of the smallest distance of 4μm and the thinnest line of 3μm has been successfully lifted off in the second routing.
出处
《半导体情报》
1991年第3期53-56,共4页
Semiconductor Information
关键词
集成电路
工艺
剥离技术
光刻胶
Integrated circuit technology
Lift-off technology
Photoresist
