摘要
研究了在制备多孔硅过程中影响其孔隙率的各种因素 ,给出了氢氟酸浓度、腐蚀时间、阳极腐蚀电流、温度及光照度与多孔硅孔隙率的关系 ,同时研究了多孔硅的晶格常数随其孔隙率变化的规律 ,并对以上各项结果作出了初步解释。
The influence of making method and formed conditions on porosity of porous silicon (PS) has been studied in this paper,and the relationships of porosity of PS to concentration of hydrofluoric acid (HF)-ethanol solution,temperature of electrolyte,etching electric current,etching temperature,and light irradiation have been provided by experiment and all the results were explained.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2000年第2期139-141,共3页
Journal of Functional Materials
基金
国家自然科学基金
新疆自然科学基金
