摘要
用阳极氧化法按不同腐蚀条件制备的多孔硅,其薄层厚度仅为几十纳米,远小于22Na源的正电子平均射程.文章提出了一种用22Na的正电子测量体寿命谱并扣除基片贡献的方法,来确定多孔硅薄层的平均孔径.
A porous silicon thin layer was prepared by anodic oxidation under different corrosion conditionEmails. The layer thickness was a few tens of nanometers, which is much smaller than the average range of positrons from a 22Na source. The mean pore volume and specific surface area in the samples were measured with 22Na positron life spectroscopy, by measuring the bulk lifetime spectrum of porous silicon and then deducting the lifetime spectrum of the substrate.
出处
《物理》
CAS
北大核心
2005年第2期147-150,共4页
Physics
基金
国家自然科学基金(批准号: 19835050)重点资助项目
关键词
正电子
湮灭
多孔硅
平均
基片
薄层
射程
层厚
寿命
研究
positron annihilation, porous silicon, ortho-positronium, anodic oxidation
