期刊文献+

Anodic bonding using a hybrid electrode with a two-step bonding process 被引量:1

Anodic bonding using a hybrid electrode with a two-step bonding process
原文传递
导出
摘要 A two-step bonding process using a novel hybrid electrode is presented.The effects of different electrodes on bonding time,bond strength and the bonded interface are analyzed.The anodic bonding is studied using a domestic bonding system,which carries out a detailed analysis of the integrity of the bonded interface and the bond strength measurement.With the aid of the hybrid electrode,a bubble-free anodic bonding process could be accomplished within 15-20 min,with a shear strength in excess of 10 MPa.These results show that the proposed method has a high degree of application value,including in most wafer-level MEMS packaging. A two-step bonding process using a novel hybrid electrode is presented.The effects of different electrodes on bonding time,bond strength and the bonded interface are analyzed.The anodic bonding is studied using a domestic bonding system,which carries out a detailed analysis of the integrity of the bonded interface and the bond strength measurement.With the aid of the hybrid electrode,a bubble-free anodic bonding process could be accomplished within 15-20 min,with a shear strength in excess of 10 MPa.These results show that the proposed method has a high degree of application value,including in most wafer-level MEMS packaging.
出处 《Journal of Semiconductors》 EI CAS CSCD 2012年第6期114-117,共4页 半导体学报(英文版)
基金 supported by the Development Project of the Scientific Equipment of the Chinese Academy of Sciences(No.YZ200940)
关键词 wafer bonding anodic bonding electrode configuration bubble-free wafer bonding anodic bonding electrode configuration bubble-free
  • 相关文献

参考文献2

二级参考文献3

共引文献8

同被引文献11

  • 1赵正平.新世世纪MEMS技术的创新发展[EB/OL].http://www.csia.net.cn.2010-11-30. 被引量:1
  • 2章钊.硅/微晶玻璃阳极建和激励的研究[D].武汉:武汉理工大学,2010. 被引量:1
  • 3Dragoi V, Lindner P, Kirchberger H, et al. Wafer Bonding: a Mature Technology for MEMS Manufacturing [J].电子工业专用设备,2007,144(6):31-36. 被引量:1
  • 4Furman B K, Mita S G. Gold-Gold (Au-Au) thermocompression (TC) bonding of very large arrays [J]. Proc of 42nd Electronic Components and Technology Conference [C] //San Diego, CA: IEEE, 1992, 883-889. 被引量:1
  • 5Chuan Seng Tan, Ronald J Gutmann, Rafael ReifL. Wafer Level 3-D ICs Process technology [M]. US: Springer, 2008. 被引量:1
  • 6Shimatsu T, Uomoto M. Atomic diffusion bonding of wafers with thin nanocrystalline metal films [J]. Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures, 2010, 28 (4) : 706-714. 被引量:1
  • 7Kirby P L, Pukala D, Manoham H, et al. Papapolymerou. Characterization of Micromachined Silicon Rectangular Waveguide at 400 GHz [J] Microwave and Wireless Components Letters, 2006, 16 (6): 366-368. 被引量:1
  • 8Loen J D, Colombano S P. A circuit representation technique for automated circuit design [J]. IEEE Transactions on Evolutionary Computation 2009, 33 (2): 145-151. 被引量:1
  • 9马沧海,廖广兰,史铁林,汤自荣,刘世元,聂磊,林晓辉.基于UV光照的圆片直接键合技术[J].Journal of Semiconductors,2008,29(7):1369-1372. 被引量:2
  • 10胡明,马家志,邹俊,张之圣.微机械加工技术在微传感器中的应用[J].压电与声光,2002,24(4):268-270. 被引量:7

引证文献1

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部