摘要
利用准二维方法求解二维泊松方程,建立了锗硅源漏单轴应变PMOS阈值电压的二维解析模型,理论计算结果和实验报道的结果能很好吻合。研究了不同沟道长度和漏压情况下的沟道表面势,分析了沟道长度、漏压及锗硅源漏中锗摩尔组分等参数对阈值电压的影响。利用TCAD工具进行仿真模拟,结果表明,沟道长度和漏压是单轴应变PMOS阈值电压漂移的主要影响因素,而锗摩尔组分在一定成分范围内影响较小。
An analytical two-dimensional （2-D） threshold voltage model for uniaxially strained PMOS with SiGe source/drain （S/D） structure was established by solving 2-D Poisson^s equation using quasi-2-D method. Theoreti- cal calculation results were in good agreement with the reported experimental data. Channel surface potentials at dif- ferent channel lengths and drain voltages were investigated, and effects of channel length, drain voltage and germa- nium molar fraction of SiGe S/D on threshold voltage were analyzed. Simulation using TCAD tools indicated that the channel length and drain voltage were major factors for threshold voltage drift, while in a certain composition range, the molar fraction of Ge showed relatively smaller effect on threshold voltage of uniaxially strained PMOS tran sistors.
出处
《微电子学》
CAS
CSCD
北大核心
2012年第3期415-419,共5页
Microelectronics
基金
国家自然科学基金资助项目(11074280)
中央高校基本科研业务费专项资金资助项目(JUSRP20914
JUDCF10031)
