摘要
通过有限元方法,研究了一种采用SiGe源漏结构的pMOS晶体管中硅沟道的应变及其分布情况,模拟计算结果与利用会聚束电子衍射方法测量得到的数据能够较好地吻合,验证了模拟模型及方法的正确性。结果表明:提高源漏SiGe中的Ge组分、减小源漏间距、增加源漏的刻蚀深度和抬高高度,能有效增加沟道的应变量,为通过控制应变改善载流子迁移率提供了设计依据。
Strain distribution in Si channel region of pMOS transistors with SiGe source and drain structures has been studied using finite element method. Simulation results are in good agreement with the data measured by convergent beam electron diffraction, verifying the correctness of the simulation model and the method. Results indicate that higher channel strain can be achieved by increasing the molar fraction of germanium, reducing the source-drain distance, increasing the recess depth and the elevation height of source and drain, which provides useful reference for improving the carriers＇ mobility by introducing and controlling the channel strain in new device designs.
出处
《微电子学》
CAS
CSCD
北大核心
2007年第6期815-818,共4页
Microelectronics
基金
国防科技重点实验室基金资助项目(51433020105DZ6802)
关键词
有限元
应变硅
应变
锗硅
PMOS
Finite element
Strained silicon
Straim SiGe
pMOS
