摘要
A new two-dimensional （2D） analytical model for the threshold-voltage of fully depleted SOI MOSFETs is derived. The 2D potential distribution functions in the active layer of the devices are obtained through solving the 2D Poisson＇s equation. The minimum of the potential at the oxide-Si layer interface is used to monitor the threshold voltage of the SOI MOSFETs. This model is verified by its excellent agreement with MEDICI simulation using SOI MOSFETs with different gate lengths,gate oxide thicknesses,silicon film thicknesses,and channel doping concentrations.
提出了一种新的全耗尽SOIMOSFETs阈值电压二维解析模型.通过求解二维泊松方程得到器件有源层的二维电势分布函数,氧化层硅界面处的电势最小值用于监测SOIMOSFETs的阈值电压.通过对不同栅长、栅氧厚度、硅膜厚度和沟道掺杂浓度的SOIMOSFETs的MEDICI模拟结果的比较,验证了该模型,并取得了很好的一致性.
