摘要
以自制铈掺杂立方相钇铝石榴石(YAG∶Ce3+)荧光粉为原料经冷静压压制得到粉末靶材,在纯氩气气氛下通过射频磁控溅射法在石英玻片上镀膜,随后在氩气气氛下1100℃/3 h热处理得到YAG∶Ce3+荧光薄膜。系统探讨了溅射功率、靶间距等因素对YAG∶Ce3+荧光薄膜物理和发光性能的影响。分析发现采用粉末靶可以明显提高YAG∶Ce3+薄膜溅射沉积速率,在靶间距20 mm,溅射功率300 W的制备条件下得到的荧光薄膜经450 nm蓝光激发时,可发射524 nm的光,较商用荧光粉发射峰略有蓝移。粉末靶溅射制备荧光薄膜具有大规模实际应用潜力。
YAG∶Ce3＋ phosphor thin films were deposited on quartz glass at room temperature by RF magnetron sputtering technique in the 100% argon atmosphere from YAG∶Ce3＋ phosphor powder target and subsequently annealed at 1100 ℃ for 3 h in argon atmosphere.The effects of sputtering power and the distance of target-substrate on the crystallization and luminescence properties of the films were investigated.It is shown that the sputtering rate from the powder target is higher than one from the conventional ceramic targets.The thin films had good crystallization and high emission intensity under the conditions of the distance of 20 mm and the sputtering power of 300 W.The emission peak of the as-prepared thin films exhibits at 524 nm and is smaller than one of the commercial YAG∶Ce3＋ phosphor.Thin film phosphor prepared by powder target has the potential for practical application.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2012年第2期381-384,共4页
Journal of Synthetic Crystals
基金
国家自然科学基金项目(21176051
61166008)
教育部科学技术研究重点项目(211141)
