摘要
为了实现X波段的低噪声放大器,介绍了按最小噪声系数设计,采用两级级联,利用Eudyna公司的HEMT晶体管设计制作的低噪声放大器。通过专用微波电路设计软件(AWR),对该电路的稳定系数、功率增益、噪声系数、驻波比、匹配网络等进行了仿真分析。根据分析结果制作的X波段LNA取得了如下指标:在9.5～10.5 GHz频带内,功率增益大于22 dB,噪声系数小于1.5 dB,输入输出驻波小于1.7。
A X-band two stages in series LNA based on the low-noise HEMT transistors of Eudyna company,which is designed with minimized noise figure,is introduced. By using the special microwave circuits design software （AWR） to analyze this circuit, stability factor, power gain, noise figure, VSWR,matching network and so on are studied. Based on the analysis, a X- band LNA is fabricated. It reached a satisfied goals：at the frequency from 9.5-10.5 GHz ,the power gain more than 22 dB, noise figure less than 1.5 dB, input and output VSWR less than 1.7.
出处
《电子设计工程》
2012年第6期166-168,共3页
Electronic Design Engineering
