摘要
利用负反馈放大器设计原理，采用GaAs PHEMT工艺技术，设计制作了一种微波宽带GaAs PHEMT低噪声放大器芯片，并给出了详细测试曲线。该放大器由两级组成，采用负反馈结构，工作频率0.8-8.5 GHz，整个带内功率增益19 dB，噪声系数1.55 dB，增益平坦度小于±0.7 dB，输入驻波比1.6，输出驻波比1.8，1 dB压缩点输出功率大于10 dBm，芯片内部集成偏置电路，单电源＋5 V供电，芯片具有良好的温度特性。该芯片面积为2.5 mm×1.2 mm。
A microwave broadband low noise GaAs PHEMT MMIC amplifier with two resistive feedback networks was designed, fabricated, and tested. Typical gain of 19 dB, gain flatness is less than ± 0.7 dB, input VSWR of 1.6, output VSWR of 1.8, noise figure of 1.55 dB, and output power greater than 10 dBm at 1 dB impression were measured over 0.8 to 8.5 GHz. The amplifier also has good temperature characteristics. It can be directly driven by single ＋ 5 V supply. The chip area is 2.5 mm × 1.2 mm.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第6期514-516,519,共4页
Semiconductor Technology
基金
国防预研基金资助项目(51408010205DZ2306)
