摘要
以自制Mg0.2Zn0.8O∶Al陶瓷为靶材,采用室温溅射后续退火磁控溅射工艺制备了Mg0.2Zn0.8O∶Al紫外透明导电薄膜。研究了溅射压强和退火气氛对Mg0.2Zn0.8O∶Al薄膜结构和光电性能的影响。结果表明:溅射氩气压强不影响薄膜的相结构,但对薄膜的取向生长和结晶质量有一定影响;薄膜的方块电阻随溅射压强的增加先大幅减小后有所增大,溅射气压为2.0 Pa时,薄膜的方块电阻最低;不同溅射气压下制备薄膜的透光范围均已扩展到了紫外区域,而且具有85%以上的高透射率,但溅射气压对薄膜的带隙宽度和透光率没有明显影响;室温下溅射制备的薄膜经真空退火处理后其导电性能显著提高,但在空气中退火处理后其导电性能反而有所下降。
Mg0.2Zn0.8O：Al UV-transparent conducting films were prepared by magnetron sputtering at room temperature with post annealing treatment. The effects of sputtering pressure and annealingatmosphere on microstructure and photoelectric properties of Mg0.2Zn0.8O：Al films were investigated. The sputtering pressure exert some influence on the crystallite orientation and quality of Mg0.2Zn0.8O：Al films. As the sputtering pressure increasing from 1.0 Pa to 3.5 Pa, the sheet resistivity of Mg0.2Zn0.8O：Al films decreased rapidly when the sputtering pressure is lower than 2.0 Pa. then increased slightlv. Though thetransparency of Mg0.2Zn0.8O：Al films deposited at various pressure are more than 85% in UV region, no obvious variation in band gap and transparency have been observed. The remarkable improvement in conductivity of Mg0.2Zn0.8O：Al films annealed in vacuum have been observed, but the conductivity will decrease when the Mg0.2Zn0.8O：Alfilms are annealed in air.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2011年第6期1526-1530,共5页
Journal of Synthetic Crystals
基金
广西信息材料重点实验室主任基金(0710908-05-Z)
广西科技基础条件平台建设专项(10-046-13)
