摘要
本文以超白玻璃为衬底,利用热丝化学气相沉积和磁控溅射法制备了Glass/nc-Si/Al的叠层结构,然后置于管式退火炉中在H2气氛下进行5 h诱导晶化,用XRD、光学显微镜、扫描电镜和拉曼光谱对样品进行了表征。结果表明所有样品都是有(111)择优取向的多晶硅薄膜,在425℃诱导时,多晶硅晶粒尺寸最大达400μm,但薄膜不连续;随着诱导温度升高到450℃,样品表面已形成了连续的多晶硅薄膜,但晶粒尺寸有所减小;475℃下诱导获得的最大晶粒尺寸约为200μm,此时多晶硅薄膜的结晶质量更好。还从动力学的角度分析了铝诱导纳米硅的晶化机理。
The glass/nc-Si/A1 layered structures were prepared by HWCVD and magnetron sputtering onhigh transparence glass substrate. The layered structures were kept in a tube furnace at HE atmosphere for 5 h to undertake an aluminum-induced crystallization process. The prepared samples were characterized by XRD, optical microscope, SEM and Raman spectrum. Polycrystalline film with a strong （111 ）orientation was found in all samples. The grain size up to 400 μm was formed in the sample treated at 425 ℃ in a discontinuous film. As the temperature increased to 450℃, continuous polycrystalline film with smaller grain size was produced. For samples prepared at 475℃, the polyerystalline film presentseven better crystal quality with a maximum grain size about 200μm. In addition, the crystallization mechanism of AIC from nanoerystalline silicon from the point of view of dynamics was carried out.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2011年第6期1387-1393,共7页
Journal of Synthetic Crystals
基金
国家高技术研究发展计划(863计划)资助项目(2006AA03Z219)
江苏高校优势学科建设工程资助项目
关键词
大晶粒
多晶硅薄膜
铝诱导
纳米硅
large grain size
polycrystalline silicon film
aluminum-induced
nanocrystalline silicon
