摘要
The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.
The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.
基金
supported by the National Natural Science Foundation of China(Grant No.61006060)
the 13115 Innovation Engineering of Shaanxi Province,China(Grant No.2008ZDKG-30)
