摘要
According to the avalanche ionization theory,a computer-based analysis is performed to analyze the structural parameters of single-and multiple-zone junction termination extension（JTE） structures for 4H-SiC bipolar junction transistors（BJTs） with mesa structure.The calculation results show that a single-zone JTE can yield high breakdown voltages if the activated JTE dose and the implantation width are controlled precisely and a multiple-zone JTE method can decrease the peak surface field while still maintaining a high blocking capability.The influences of the positive and negative surface or interface states on the blocking capability are also shown.These conclusions have a realistic meaning in optimizing the design of a mesa power device.
According to the avalanche ionization theory,a computer-based analysis is performed to analyze the structural parameters of single-and multiple-zone junction termination extension（JTE） structures for 4H-SiC bipolar junction transistors（BJTs） with mesa structure.The calculation results show that a single-zone JTE can yield high breakdown voltages if the activated JTE dose and the implantation width are controlled precisely and a multiple-zone JTE method can decrease the peak surface field while still maintaining a high blocking capability.The influences of the positive and negative surface or interface states on the blocking capability are also shown.These conclusions have a realistic meaning in optimizing the design of a mesa power device.
基金
Project supported by the National Natural Science Foundation of China(No.60876061)
the Pre-Research Project of China(No. 51308040302).
