摘要
采用Chartered 0.18-μm CMOS工艺,设计了一种基于MOS亚阈值特性的全MOS结构电压基准源。它利用VT的正温度特性补偿VTH的负温度特性,以实现一个零温度系数的输出电压。为了实现较低的功耗,大部分MOS晶体管均工作在亚阈值区。仿真结果表明:电路可工作在0.7V到3.6V电压范围内;在0℃～120℃范围内,电压基准的温度系数可达2.97×10-6/℃;在1V电源电压下,电路的静态功耗和输出电压值分别为1.48μW和430.6mV;在没有滤波电容的情况下,在1kHz时,输出电压的电源电压抑制比为-61dB。
A low-power voltage reference source with all MOSFET structure was designed based on Chartered 0.18 μm CMOS process.In this circuit,negative temperature coefficient（TC） of VTH was compensated with VT,which has a positive TC,to generate an output voltage with zero TC.In order to achieve low power,most of the MOSFETs operated in sub-threshold region.Simulation results showed that the circuit operated over a wide range of supply voltage from 0.7 V to 3.6 V,and it had a temperature coefficient of 2.97×10-6/℃ in the temperature range from 0 ℃ to 120 ℃.At 1 V power supply,the voltage reference source had an output voltage of 430.6 mV and a power dissipation of 1.48 μW,and its power supply rejection ratio without filtering capacitor reached-61 dB at 1 kHz.
出处
《微电子学》
CAS
CSCD
北大核心
2011年第5期654-657,共4页
Microelectronics
基金
湖南省科技计划项目(2010GK3052)
湖南省长沙市科技计划重点项目(K0902012-11)
关键词
CMOS
电压基准源
亚阈值
弱反型
强反型
CMOS
Voltage reference source
Subthreshold
Weak inversion
Strong inversion
