摘要
随着便携式电子产品的不断推出,低功耗电路设计已成为一种趋势,而将MOS管偏置在弱反型区是模拟电路低功耗设计的主要方法。本文研究了电路偏置在弱反型区时器件噪声和失调产生的影响,并且提出了改善电路噪声和失调特性的方案。
With the continuous appearance of portable devices,low power design technique has become the current trend of circuit design.The main method of low power design is to bias circuit in the weak inversion.This paper describes the influence of the noise and mismatch to the circuits biased in the weak inversion,and presents corresponding solutions.
出处
《高职论丛》
2008年第2期7-12,共6页
Higher Vocational Education Forum
关键词
弱反型
噪声
失调
weak inversion
noise
mismatch
